m o s f e t rohs device page 1 rev :a features - t renchfet power mosfet mechanical data - case: sot -23, molded plastic. circuit diagram CJ2324-G (n-channel mosfet ) d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) qw -btr45 comchip t echnology co., l td. s o t - 2 3 3 1 2 0.1 18(3.00) 0.1 10(2.80) 0.055(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.007(0.150) 0.002(0.080) 0.100(2.55) 0.089(2.25) c o m c h i p s m d d i o d e s p e c i a l i s t g d s - low r ds(on) . - surface mount package. 3 1 2 v (br)dss r ds(on) max i d 100v 234m @ 10v 267m @ 6v 278m @ 4.5v 2a 1. ga te 2. source 3. drain company reserves the right to improve product design , functions and reliability without notice. absolute maximum ratings (at t a=25 c unless otherwise noted) d rain-source voltage gate-source voltage continuous drain current junction temperature storage temperature unit symbol parameter v ds v gs i d r ja t j t stg v alue 100 20 2 357 -40 to +150 -55 to +150 v v a c/w c c thermal resistance from junction to ambient pulsed drain current i dm* 8 a * repetitive rating: pulse width limited by junction temperature. lead temperature for soldering purposes(1/8 form case for 10 s) t l 260 c power dissipation p d 350 mw
page 2 rev :a qw -btr45 comchip t echnology co., l td. m o s f e t c o m c h i p s m d d i o d e s p e c i a l i s t company reserves the right to improve product design , functions and reliability without notice. symbol parameter conditions min max units drain-source breakdown voltage 234 v gs = 0v , i d = 250a zero gate voltage drain current forward transcondu ctance (note 1) reverse transfer capacitance input capacitance t urn-on delay time t urn-of f delay time t urn-on rise time t urn-on f all time v ds = v , i d = 250a gs v ds = 100v , v gs = 0v v = 10v , gs i d = 1.5a v ds = 20v , i d = 1.5a v (br) dss i dss r ds(on) g fs c oss c rss t d(on) t r t d(of f) t f 100 1 2 45 39 26 20 v m ? s ns v ds =50v , v gs =0v , f=1mh z c iss 190 v = 6v , gs i d = 1a 267 output capacitance t yp 22 13 pf electrical characteristics (at t a =25c unless otherwise noted) gate threshold voltage (note 1) v gs(th) gate leakage current -body v gs = 20v , v ds = 0v i gss 100 a drain-source on-resistance (note 1) na 2.8 1.2 r l =39? r g =1?, i d =1.3a , v dd =50v , v gen =4.5v v v = 4.5v , gs i d = 0.5a 278 diode forward volta ge (note 1) i s = 1.3a , v gs = 0v v sd 1.2 v dynamic p arameters ( note2) st a tic p arameters gate resistance rg 2.8 f=1mh z 0.3 ? switching p arameters (note2) gate-source charge t otal gate charge gate-drain charge q g q gd 5.8 0.75 1.4 nc v ds =50v , v gs =4.5v i d =1.6a q gs note: 1. pulse test : pulse width . 300s, duty cycle 0.5% 2. guaranteed by design, not subject to production testing.
qw -btr45 typical characteristics ( CJ2324-G ) comchip t echnology co., l td. page 3 rev :a m o s f e t c o m c h i p s m d d i o d e s p e c i a l i s t d r a i n c u r r e n t , i d ( a ) gate to source v oltage, v gs (v ) fig.2 - t ransfer c haracteristi cs 0 1 2 3 4 0 2 . 5 1 . 5 4 . 0 4 . 5 1 . 0 6 5 . 0 v ds = 3v puls ed 3 . 5 3 . 0 2 . 0 0 . 5 5 t a=25 c t a=10 0c o n - r e s i s t a n c e , r d s ( o n ) ( m ? ) fig.4 - r ds(on) v gs o n - r e s i s t a n c e , r d s ( o n ) ( m ? ) drain current, i d (a) fig.3 - r ds(on) i d 0 2 6 8 4 0 1 3 4 5 2 1 6 0 2 6 0 2 0 0 1 8 0 2 2 0 2 4 0 2 8 0 1 0 gate t o source v oltage, v gs (v ) 1 0 0 0 8 0 0 5 0 0 2 0 0 6 0 0 7 0 0 9 0 0 4 0 0 3 0 0 t a=100c pulsed t a=25c pulsed i d =0 .8 a v g s = 4 . 5 v t a=25c pulsed source to drain v oltage, v sd (mv ) 0 . 0 6 0 . 0 1 fig.5 - i s v sd 0 . 2 0 . 4 0 . 6 1 . 2 1 0 . 1 s o u r c e c u r r e n t , i s ( a ) 0 . 8 1 . 0 1 . 4 1 . 6 1 e - 3 t h r e s h o l d v o l t a g e , v t h ( v ) junction t emperature, t j (c) fig.6 - threshold v oltage 2 5 5 0 1 0 0 1 2 5 7 5 1 . 4 2 . 0 1 . 7 1 . 5 1 . 8 1 . 9 2 . 1 1 . 6 i d =2 50 ua t a=100c pulsed t a=25c pulsed d r a n c u r r e n t , i d ( a ) drain to soruce v oltage, v ds (v) 0 1 2 3 4 5 fig.1 - output characteristics 0 6 4 8 1 0 2 1 3 5 7 9 v gs =3.5v v gs =3.8v v gs =3v v gs =8v v gs =10v ,12v pulsed v g s = 6 v v g s = 1 0 v company reserves the right to improve product design , functions and reliability without notice.
qw -btr45 comchip t echnology co., l td. page 4 rev :a m o s f e t c o m c h i p s m d d i o d e s p e c i a l i s t reel t aping specification d f e b p 1 p 0 b c d d d 2 d 1 s o t - 2 3 s y m b o l a ( m m ) ( i n c h ) 2 . 1 4 2 0 . 0 3 9 4 . 0 0 0 . 1 0 1 . 5 0 + 0 . 1 0 5 4 . 4 0 1 . 0 0 1 3 . 0 0 1 . 0 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 1 7 8 . 0 0 2 . 0 0 0 . 0 5 9 0 . 0 0 4 + 7 . 0 0 8 0 . 0 7 9 0 . 5 1 2 0 . 0 3 9 s y m b o l ( m m ) ( i n c h ) 0 . 0 . 0 0 4 1 5 8 0 . 1 5 8 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 3 . 5 0 0 . 1 0 0 . 1 3 8 0 . 0 0 4 s o t - 2 3 3 . 1 5 0 . 1 0 0 . 1 2 4 0 . 0 0 4 2 . 7 7 0 . 1 0 0 . 1 0 9 0 . 0 0 4 1 . 2 2 0 . 1 0 0 . 0 4 8 0 . 0 0 4 1 2 . 3 0 1 . 0 0 0 . 4 8 4 0 . 0 3 9 8 . 0 0 0 . 3 0 / + C 0 . 1 0 0 . 3 1 5 0 . 0 1 2 / + C 0 . 0 0 4 company reserves the right to improve product design , functions and reliability without notice.
qw -btr45 comchip t echnology co., l td. page 5 rev :a m o s f e t c o m c h i p s m d d i o d e s p e c i a l i s t marking code part number CJ2324-G marking code s24 xx x 3 1 2 xxx = product type marking code company reserves the right to improve product design , functions and reliability without notice. standard packaging case t ype qty per reel (pcs) 3,000 sot -23 reel size (inch) 7 suggested p ad layout a c b size (inch) 0.031 (mm) 0.80 0.60 1.90 0.024 0.075 sot -23 2.02 0.080 a b c d d e 2.82 0.1 1 1 e
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